Widegap Semiconductor Crystal Growth Technology for Power Electronics Innovation

Wide Band Gap Semiconductor Devices for Power Electronics

It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative chang...

Reliability Design Technology for Power Semiconductor Modules

The market for power semiconductor modules is spreading not only to general-purpose inverters, servo motor drives, NC machine tools and elevators but also to new applications through the realization of electric vehicles and renewable energy systems. Fuji Electric has developed various power modules in response to market needs, and as the market expands in the future, the required performance fo...

Power Electronics Technology Trends and Prospects

Power Electronics Technology that Supports Smart Grid

† Fuji Electric Co., Ltd following a parallel off (2) Isolated operation detection function An isolated operation detection function is essential for connecting to a power system. Isolated operation is the state in which an isolated system that has been disconnected from the power system is supplied with electricity from the output of a distributed power source only. In the isolated operating s...

A Theoretical Investigation for Electronics Structure of Mg(Bio2)2 Semiconductor Using First Principle Approach

The Mg(BiO2)2 is the orthorhombic crystal system acting as semiconductor in electric devices. To evaluate electronic band structures, the total density of state (TDOS) and the partial density of state (PDOS), Generalized Gradient Approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE0) was used for Mg(BiO2)2. The band gap was recorded at 0.959 eV, which is supported by a good semiconducto...